Interference-Term Elimination for Wigner Distribution Using a Frequency Domain Adaptive Filter
スポンサーリンク
概要
- 論文の詳細を見る
In a nonstationary signal analysis, it has been clarified that the discrete Wigner distribution, WD, is the most suitable distribution. The use of the WD is, however, often complicated by the occurrence of interference terms. Thus, we proposed a modified WD, called the RID (reduced interference distribution), and verified that the RID could markedly suppress the occurrence of interference terms in both the auto-and the cross-WD. In this study, we developed another method which makes use of a block adaptive filter to eliminate interference terms and evaluate them quantitatively. In this method, the least mean square, LMS, algorithm is applied in the frequency domain. Simulated signals of a chirp type and an acoustic signal of a concert hall are analyzed using spectrograms, WD, RID and the new method. From comparisons among the results, it is concluded that the best result can be obtained using the new method proposed in this study.
- 一般社団法人日本機械学会の論文
- 1996-12-15
著者
-
Kitagawa H
Canon Inc. Utsunomiya Jpn
-
Kitagawa Hajime
Production-systems Engineering Toyohashi University Of Technology
-
Ishimitsu Shunsuke
Kawagoe Plant, Pioneer Electronic Corporation
-
Ishimitsu Shunsuke
Kawagoe Plant Pioneer Electronic Corporation
関連論文
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- In-Diffusion and Annealing of Copper in Germanium
- Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
- Diffusion Mechanism of Nickel and Point Defects in Silicon
- Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
- Energy Levels and Solubility of Electrically Active Cobalt in Silicon Studied by Combined Hall and DLTS Measurements
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- A Study of Liquid Dispensing Head Using Fluidic Inertia
- Interference-Term Elimination for Wigner Distribution Using a Frequency Domain Adaptive Filter