Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
スポンサーリンク
概要
- 論文の詳細を見る
The radiative recombination mechanisms of Sn-doped GaS have been investigated by photoluminescence (PL) measurements. The PL spectrum at 77 K appears in the energy region between 1.25 and 2.3 eV and is dominated by two emission bands. The temperature dependence of the full-width at half-maximum and the shapes of the PL spectra of the two emission bands are characterized by the recombination mechanism of the configurational coordinate model. The origins of the two emission bands are related to the complex centers of vacancies and impurity atoms.
- 2010-05-25
著者
-
Ikari Tetsuo
Department Of Electrical And Electronic Engineering Miyazaki University
-
Shigetomi Shigeru
Department Of Physics Kurume University
-
Tetsuo Ikari
Department of Electrical and Electronic Engineering, Miyazaki University, Miyazaki 889-2155, Japan
-
Shigeru Shigetomi
Department of Physics, Kurume University, Kurume, Fukuoka 830-0011, Japan
関連論文
- Electrical Properties of Layered ZrSe_2 Single Crystals Annealed in Selenium Atmosphere
- Effect of Isothermal Annealing on Crystallization Mechanism of Amorphous Ni_Cr_P_ Metallic Alloys
- Photoacoustic Signals from Ion-Implanted and Epitaxially Grown Layers on Silicon Substrate
- Spatial Distribution of EL2 in GaAs Wafer Determined by Photoacoustic Spectroscopy
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Fundamenral Absorption Edge of γ-InSe
- Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal Signals
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
- Optical and Electrical Properties of p-GaAe Doped with Sb
- Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
- Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Non-Radiative Carrier Recombination Process in AlGaAs/GaAs Hetero-Structure investigated by Piezoelectric Photothermal Spectroscopy
- Photoacoustic Spectra of Si Wafers at Liquid Helium Temperature
- Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Determination of exciton binding energy of GaInNAs quantum well structures by piezoelectric photothermal spectroscopy compared with photoreflectance measurements (Special issue: Microprocesses and nanotechnology)
- Piezoelectric Photoacoustic and Photoluminescence Properties of CuIn_XGa_Se_2 Alloys
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Nonradiative Investigation of Hole Photoionization Spectrum of EL2 in Carbon Concentration Controlled Semi-Insulating GaAs
- Piezoelectric Photothermal Spectra of Co Doped ZnO Semiconductor
- Crystallization of Amorphous GeSe_2 Semiconductor by Isothermal Annealing without Light Radiation
- Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
- Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
- Effect of Annealing on Electrical and Optical Properties of Si-Implanted GaAs
- Crystalline InSe Films Prepared by RF-Sputtering Technique
- Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Piezoelectric Photothermal Study of the Optical Absorption Spectra of Microcrystalline Silicon
- Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
- Growth and Annealing of ZnO Films Grown by Spray Pyrolysis
- Annealing Behavior of Deep Trap Level in p-GaTe
- Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Effect of Surface States on Piezoelectric Photothermal Specta of Silicon Single Crystals