In-Diffusion and Isothermal Annealing of Iron-Related Defects in n-Type Silicon
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概要
- 論文の詳細を見る
In iron-related deep levels in n-type silicon, the introduced concentrations of E_c-0.21 eV(B) and E_c-0.41 eV(C) levels decrease with increasitng the diffusion time at 1160℃, indicating that the formation process includes the conversion process into other types of complexes. The concentration of the C level decays exponentially with the duration of isothermal aanealing up to 200℃, the time constant activation energy being 0.65 eV. The results indicate that the observed defects are due to the intermediate states in consecutive reactions of iron-related complex formation.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Ni Baorong
Department Of Electronic Materials Engineering Fukuoka Institute Of Technology
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tanaka Shuji
Department of Electronic Materials Engineering, Fukuoka Institute of Technology,
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NI Baorong
Department of Materials Engineering, Fukuoka Institute of Technology
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TANAKA Shuji
Department of Chemistry, Faculty of Science, Kyushu University
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