Nakashima Hiroshi | Advanced Science And Technology Center For Cooperative Research Kyushu University

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概要

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著作論文

Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
Electrical Properties of p- and n-GaSe Doped with As and Ge
Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
Benefits of Flat Polymer Dielectric Surface Loading Organic Semiconductors in Field-Effect Transistors Prepared by Electrode-Peeling Transfer
Organic Field-Effect Transistors with Gate Dielectric Films of Poly-$p$-Xylylene Derivatives Prepared by Chemical Vapor Deposition
Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance
Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma
Annealing Behavior of Deep Trap Level in p-GaTe

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