Deposition of Microcrystalline Ge Thin Films at Low Temperature and Structural and Electrical Properties
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概要
- 論文の詳細を見る
The purpose of this study is twofold : to deposit crystalline Ge thin films on the glass substrate at low substrate temperature by the plasma CVD method and to examine structural and electrical properties of deposited crystalline Ge thin films. Crystalline Ge thin films were deposited at the substrate temperature of 300℃ when GeH_4 concentration diluted with H_2 was less than 1.0%. The fact that the films were crystalline was confirmed by X-ray diffraction measurement. When GeH_4 concentration was 0.1%, the value of full-width at half-maximum in the X-ray diffraction peak (Ge (III) peak) was the smallest, and the grain size was estimated to be 400 Å using Scherrer's formula. It has been found that the films are n-type and the mobility of the majority carrier (electron) is about 15cm^2/V・s, which is higher than that of poly-crystalline Ge films prepared by plasma assisted deposition at the substrate temperature of 400℃.
- 東海大学の論文
著者
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Uehara Fumiya
Department Of Living Science Tokai University
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Uehara Fumiya
Department Of Resources And Environmental Science School Of Humanities And Culture
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Nakashita Toshio
Department Of Applied Physics
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MAKI Kohsuke
Ando-Denki Co., Ltd.
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MONZEN Tomoya
Course of Applied Science
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Maki Kohsuke
Ando-denki Co. Ltd.
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