Deposition of Diamond Thin Films on AIN Substrates
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概要
- 論文の詳細を見る
As a substrate for diamond synthesis, diamond, single crystalline Si and metals such as Cu and Mo have usually been utilized. There is reports that single-crystal beryllium oxide (BeO) and cubic boron nitride (c-BN) were used as insulating substrates. However, aluminium nitride (AIN) has not been used as a insulating substrate so far. In this study, we chose commercially available AIN an the insulating substrate, and tried to synthesize the diamond film on this substrate. It was confirmed that the AIN substrate was poly crystalline with the grain size of about 5μm or less in a diameter, possessing the properties of insulator with the resistivity of 1.5×10^<11>Ω・cm. The AIN substrate is cheeper than BeO and c-BN, and if diamond is deposited on this substrate, it may be very interesting and utilizing from the viewpoint of fundamental study as well as applications. The AIN substrate was scratched by the diamond paste consisting of diamond particles of about 9μm in diameter and the diamond films were synthesized on the substrate by the hot filament CVD method using CH_4 gas as the source gas. Diamond with facets was synthesized on the substrate when CH_4 gas was diluted by H_2 with the concentration of less than 1%. It has been confirmed from the X-ray diffraction measurement and laser Raman spectroscopy that the deposited films are diamond. This is the first report concerning diamond synthesis on the insulating AIN substrates.
- 東海大学の論文
著者
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Nakashita Toshio
Department Of Applied Physics
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ISHIDA Sayoko
Course of Applied Science
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YAMAMOTO Makoto
Sanken-Denki Co., Ltd.
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Yamamoto Makoto
Sanken-denki Co. Ltd.
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