Carrier Concentration Dependence of Photoacoustic Spectra of Silicon by a Piezoelectric Transducer Method

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概要

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• Photoacoustic(PA)spectra near the energy gap(E_g)of n- and p-type silicon(Si)were observed at various carrier concentrations using a piezoelectric transducer method, With increasing carrier-concentration, the PA signal intensity at energies slightly higher than E_g decreased for n-type samples and increased for p-type samples. ne decrease and the increase were considered to be due to the increase in free electrons at the bottom of the conduction band and to the increase in holes at the top of the valence band, respectively. The PA spectra were not observed for either type of sample above a carrier concentration of 10^<17>cm^<-3>

• 社団法人応用物理学会の論文
• 2000-05-30

著者

• Uehara Fumiya

  Department Of Living Science Tokai University

• KUWAHATA Hiroshi

  Department of Electronics, Faculty of Engineering, Tokai University

• Muto Nobuo

  Department Of Electrical Engineering Meiji University

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