Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates

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概要

• 論文の詳細を見る

• We report on the lattice-mismatched growth of In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy. A buffer layer structure and its growth conditions were optimized. As a result, we obtained a sample with a mirrorlike surface which exhibits electron mobility of 10500 cm^2/V・s and 48500 cm^2/V・s at 300 K and 77 K, respectively. These values are comparable to those obtained in lattice-matched structures grown on InP substrates. To our knowledge, the room temperature mobility is the highest ever reported in a modulation-doped heterostructure grown on a GaAs substrate.

• 社団法人応用物理学会の論文
• 1989-07-20

著者

• Matsuno Toshinobu

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

• Inoue Kaoru

  Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.

• Harmand Jean

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Inoue Kaoru

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

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• Photoluminescence of an InAlAs/InGaAs Quantum Well Structure Grown on a GaAs Substrate
• Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates
• In_Ga_As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy

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