In_<0.5>Ga_<0.5>As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• We report on the lattice-mismatched growth and electrical properties of In_<0.5>Ga_<0.5>As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam Epitaxial growth at about 350℃. A drastic reduction in residual carrier accumulation has been achieved, and a high electron mobility at room temperature of 11100 cm^2/V・s was obtained with an electron concentration of 3×10^<12>/cm^2. It was found that the cause of residual carrier accumulation is related to the growth interruption or temperature rise after the growth of the graded buffer layer. The fabricated Modulation-doped Field Effect Transistors showed low output conductance, good pinch-off characteristics and no kink effect. The higher transconductance of 270 mS/mm was also obtained.

• 社団法人応用物理学会の論文
• 1991-12-30

著者

• Inoue K

  Matsushita Electric Ind. Co. Ltd. Osaka Jpn

• Matsuno Toshinobu

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

• Inoue Kaoru

  Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.

• Masato Hiroyuki

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

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• Photoluminescence of an InAlAs/InGaAs Quantum Well Structure Grown on a GaAs Substrate
• Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates
• In_Ga_As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy

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