Photoluminescence of an InAlAs/InGaAs Quantum Well Structure Grown on a GaAs Substrate

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概要

• 論文の詳細を見る

• An In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As quantum well structure was grown on a GaAs substrate by molecular beam epitaxy. A linearly graded InGaAlAs layer grown at 380℃ was used as a buffer layer. The photoluminescence of this structure was observed at 15 K. The InGaAs quantum well thicknesses ranged from 20 Å to 500 Å. Emission of each quantum well was clearly resolved. The luminescence linewidths were analyzed and compared to the results reported for the material system grown lattice-matched to InP. We deduced an enhancement of the alloy clustering and well thickness fluctuations which probably do not exceed 1 monolayer but which have a large lateral extension. These features are related to the lattice mismatch of the structure with the substrate.

• 社団法人応用物理学会の論文
• 1990-02-20

著者

• Matsuno Toshinobu

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Matsuno Toshinobu

  Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

• Inoue Kaoru

  Semiconductor Laboratory Matsushita Electric Industrial Co. Ltd.

• Harmand Jean-christophe

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

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