Arakawa Tomiyuki | Vlsi Research & Development Center Oki Electric Industry Co. Ltd.
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概要
- ARAKAWA Tomiyukiの詳細を見る
- 同名の論文著者
- Vlsi Research & Development Center Oki Electric Industry Co. Ltd.の論文著者
関連著者
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Arakawa Tomiyuki
Vlsi Research & Development Center Oki Electric Industry Co. Ltd.
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Matsumoto Ryoichi
Lsi Process Technology Division Oki Electric Industry Co. Ltd.
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ARAKAWA Tomiyuki
VLSI R & D Center
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Hayashi Takahisa
Vlsi Research & Development Center Oki Electric Industry Co Ltd.
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Hayashi Takafumi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Hayashi Takayoshi
Advanced Research Institute For Science And Engineering Waseda University
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Kita Akio
Vlsi Research & Development Center Oki Electric Industry Co. Ltd.
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Matsumoto Ryoichi
LSI Process Technology Division, Oki Electric Industry Co., Ltd.
著作論文
- Impact of Tunnel Film Oxynitridation on Band-to-Band Tunneling Current and Electron Injection in Flash Memory
- Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory (Special Issue on ULSI Memory Technology)
- Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity
- Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity