Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity

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概要

• 論文の詳細を見る

• The relationship between nitrogen profiles and polarity dependence of wearout and breakdown in oxynitride films was investigated. With positive bias stress, higher concentration of nitrogen atoms near an oxynitride/Si interface (∼2 at.%) and in the oxynitride bulk (∼0.3 at.%) reduce charge trap and interface state generation, and produce greater charge-to-breakdown (Q bd). In contrast, with negative bias stress, nitrogen atoms near an interface decrease the number of charge traps, but, cannot reduce interface state generation, and thus give smaller Q bd. Furthermore, nitrogen atoms near an oxynitride surface (over 1.5 at.%) cause undesirable results for both bias stresses. Optimum nitrogen profile in an oxynitride film is discussed the viewpoint of reliability for both bias stresses.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Kita Akio

  Vlsi Research & Development Center Oki Electric Industry Co. Ltd.

• Arakawa Tomiyuki

  Vlsi Research & Development Center Oki Electric Industry Co. Ltd.

• Matsumoto Ryoichi

  Lsi Process Technology Division Oki Electric Industry Co. Ltd.

• ARAKAWA Tomiyuki

  VLSI R & D Center

関連論文

• Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs
• Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
• Impact of Tunnel Film Oxynitridation on Band-to-Band Tunneling Current and Electron Injection in Flash Memory
• Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory (Special Issue on ULSI Memory Technology)
• Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity
• Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity

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