Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Matsumoto Ryoichi

  LSI Process Technology Division, Oki Electric Industry Co., Ltd.

• Kita Akio

  Vlsi Research & Development Center Oki Electric Industry Co. Ltd.

• Arakawa Tomiyuki

  Vlsi Research & Development Center Oki Electric Industry Co. Ltd.

• Matsumoto Ryoichi

  Lsi Process Technology Division Oki Electric Industry Co. Ltd.

• ARAKAWA Tomiyuki

  VLSI R & D Center

関連論文

• Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs
• Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme
• Impact of Tunnel Film Oxynitridation on Band-to-Band Tunneling Current and Electron Injection in Flash Memory
• Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory (Special Issue on ULSI Memory Technology)
• Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity
• Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity

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