Considering the Dependence of the Light-Induced Effect on Carbon Content in Boron-Doped Amorphous Silicon-Carbon
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概要
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The inverse Staebler-Wronski effect is observed in boron-doped amorphous silicon (a-Si:H), in which the dark conductivity increases with prolonged light-soaking and recovers with thermal annealing. This effect is suppressed by the incorporation of carbon, and the conventional Staebler-Wronski effect is observed in boron-doped amorphous silicon-carbon (a-SiC:H) with a high carbon content. It is found that the dependence on carbon content is due to the variation of the inverse effect. The inverse effect in a-Si:H shows significant recovery to the initial state even at room temperature, but the conventional effect in a-SiC:H is stable near room temperature. The conventional effect in p-type a-SiC:H is probably similar to that in intrinsic a-Si:H but the inverse effect in p-type a-Si:H has a different mechanism, such as unstable boron activation.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-15
著者
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Tsuda Shinya
New Materials R. C. Sanyo Electric Co. Ltd.
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Isomura Masao
New Materials Research Center Sanyo Electric Co . Ltd.
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Tanaka Makoto
New Materials Research Center Sanyo Electric Co. Ltd.
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Isomura Masao
New Materials Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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Tsuda Shinya
New Materials Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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