Roles of SiH3 and SiH2 Radicals in Particle Growth in rf Silane Plasmas
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概要
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Temporal evolutions of spatial profiles of SiH3 radicals, radical production rates, short-lifetime radicals and particle amount in rf silane plasmas are studied using various methods including infrared-diode-laser-spectroscopic and laser-light-scattering methods. Based on the results, contributions of SiH3 and SiH2 radicals to particle growth are discussed. Particles nucleate and grow, from beginning of their growth, principally around the plasma/sheath boundary near the powered electrode. The spatial profile of the particle amount is very similar to those of the densities and production rate of short-lifetime radicals. A density of SiH3 radicals amounts to about 1012 cm-3, and its spatial profile is fairly flat between the electrodes from the discharge initiation. These results suggest that the particle species responsible for the nucleation of particles is not SiH3 but radicals such as SiH2, which is highly reactive and produced at a high rate. The SiH2 radicals react quickly with Si nH2 n+2 (n=1, 2,…) to form polymerized species. Among them, the higher-order polymerized species absorb the lower-order ones produced later, and consequently suppress further nucleation of particles. While the contribution of SiH3 radicals to particle nucleation and subsequent initial growth is not so important, they may affect the deposition rate of film on the substrate when the particle radius increases to about 10 nm.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-30
著者
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Yamamoto Yasuo
Department Of Chemistry College Of Science Rikkyo University
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Shiratani Masaharu
Department Of Electoronics Kyushu University
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Ohkura Hiroshi
Department Of Applied Physics Osaka City University
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SUGANUMA Shinji
Department of Electronics, Faculty of Engineering, Nagoya University
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Fukuzawa Tsuyoshi
Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En
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Watanabe Yukio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Shiratani Masaharu
Department of Electronic Device Engineering, Graduate School of Information Science and Electrical Engineering,
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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Kawasaki Hiroharu
Department of Electronic Device Engineering, Graduate School of Information Science and Electrical Engineering,
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Kawasaki Hiroharu
Department of Electrical and Electronic Engineering, Sasebo National College of Technology, Sasebo, Nagasaki 857-1193, Japan
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Fukuzawa Tsuyoshi
Department of Electronic Device Engineering, Graduate School of Information Science and Electrical Engineering,
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Suganuma Shinji
Department of Electronics, Faculty of Engineering, Nagoya University, Furo-cyo, Chikusa-ku, Nagoya 464, Japan
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Ohkura Hiroshi
Department of Electronic Device Engineering, Graduate School of Information Science and Electrical Engineering,
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Goto Toshio
Department of Electronics, Faculty of Engineering, Nagoya University, Furo-cyo, Chikusa-ku, Nagoya 464, Japan
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Yamamoto Yasuo
Department of Electronics, Faculty of Engineering, Nagoya University, Furo-cyo, Chikusa-ku, Nagoya 464, Japan
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