Fabrication of Graphene-Based Films Using Microwave-Plasma-Enhanced Chemical Vapor Deposition
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概要
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Microwave plasma is one of the high-density plasmas and has been extensively used for the growth of diamond and aligned carbon nanotubes for more than a decade. However, the conventional microwave plasma of the cylindrical resonant cavity type is not suitable for the synthesis of graphene. The plasma ball produced in the resonant cavity provides a number of important species as well as ions, while deposits are damaged by the excess ion bombardment since the substrate is exposed to the plasma ball. To simply control the position of the plasma ball and reduce the ion bombardment on the substrate surface, a grounded molybdenum mesh was installed over the substrate plate to realize a remote plasma configuration. As a result, the distance between the plasma ball and the copper substrate was increased, and few-layer graphene-based films were successfully synthesized in 1 min on copper substrates placed on the entire region of a substrate holder 10 cm in diameter by using conventional microwave-plasma enhanced chemical vapor deposition.
- 2013-01-25
著者
-
Hiramatsu Mineo
Department Of Electrical And Electronic Engineering Meijo University
-
Kondo Hiroki
Deparment Of Physics Saga University
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Naito Masateru
Department of Electrical and Electronic Engineering, Meijo University, Nagoya 468-8502, Japan
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