Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
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概要
- 論文の詳細を見る
A floating-gate memory with surface-nitrided Si nanocrystals buried in a SiO2 matrix has been fabricated employing radical nitridation. Si nanocrystals with a number density higher than $1\times 10^{12}$ cm-2 and an average grain size smaller than 6 nm have been grown using an ultrathin amorphous Si layer predeposited on the SiO2 surface. Since the radical nitridation of the formed Si nanocrystals effectively suppresses excess oxidation of nanocrystals during the control oxide formation, the Si nanocrystals have been successfully buried in the SiO2 matrix without losing their number density, grain size and fine spherical shape. Electrical properties of the floating-gate memory were also examined. A flat band voltage shift larger than 1 V, which is consistent with the number density of Si nanocrystals, was observed in capacitance–voltage measurements.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Naito Shinya
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Sakashita Mitsuo
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ueyama Tomonori
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ogawa Masaki
Ecotopia Science Institute Nagoya University
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Kondo Hiroki
Deparment Of Physics Saga University
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Ueyama Tomonori
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Zaima Shigeaki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Kondo Hiroki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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