Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
Pr silicate films without interfacial layers were formed by pulsed laser deposition and high-temperature postdeposition annealing (PDA) and were evaluated in terms of structures and electrical properties. In the fabrication processes, film thickness and ambient gases during deposition were controlled. In some films, crystallization of Pr silicate was observed by transmission electron microscopy and it was found that tetragonal Pr2Si2O7 was epitaxially grown on Si(001) substrates. By deposition in Ar, Pr silicate with a small capacitance equivalent oxide thickness (CET) and a low leakage current density ($J$) was obtained ($\mathrm{CET}=1.1$ nm and $J=6 \times 10^{-4}$ A/cm2 at a gate voltage of $+1$ V relative to the flat band voltage).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Sakashita Mitsuo
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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OGAWA Masaki
Center for Cooperative Research in Advanced Science & Technology, Nagoya University
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Ariyoshi Keiko
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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