Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
スポンサーリンク
概要
- 論文の詳細を見る
The formation of palladium silicide on Pd/Ti/Si systems with and without heavy B-doping has been investigated. For comparison, Pd2Si was also formed on Pd/Si systems. The agglomeration of Pd2Si could be retarded in Pd/Ti/Si systems with and without B-doping after annealing at 600 °C. The existence of the Ti layer could improve the thermal stability of Pd2Si. In addition, epitaxial or highly oriented Pd2Si formed in Pd/Ti/Si systems. The two orientation relationships of Pd2Si layers were identified to be $\text{Pd$_{2}$Si}[1\bar{1}0]\parallel\text{Si}[\bar{1}10]$ and $\text{Pd$_{2}$Si}[110]\parallel\text{Si}[001]$, and $\text{Pd$_{2}$Si}[100]\parallel\text{Si}[\bar{1}10]$ and $\text{Pd$_{2}$Si}[001]\parallel\text{Si}[001]$. The formation of strained epitaxial Pd2Si layers was found in Pd/Ti/Si systems. The improvement in the thermal stability of Pd2Si and the formation of epitaxial or highly oriented Pd2Si in Pd/Ti/Si systems were observed with and without B-doping.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-05-25
著者
-
Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
-
Nakatsuka Osamu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Osamu Nakatsuka
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Suryana Risa
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Risa Suryana
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
関連論文
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
- Surface Treatment of Ge(001) Surface by Radical Nitridation
- Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
- Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation
- Quantum Chemical Study of the Oxidation Sites in Hydrogen- and Water-Terminated Si Dimers : Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface
- Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Titanium Oxycarbide on TiC (100) Surface
- Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure
- Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy
- Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
- Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films
- Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy
- Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
- Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
- Formation of Metal/Silicon Contacts for ULSI and Induced Defects by Silicidation
- Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
- Characterization of Damage of AlO/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Carbonization of Si(111)-$7\times 7$ Surface Using CH4 with Hot Tungsten Filament
- Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures
- Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
- Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
- Low-Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
- Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
- Characterization of Local Current Leakage in La2O3–Al2O3 Composite Films by Conductive Atomic Force Microscopy
- Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
- Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition
- Analysis of Local Breakdown Process in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy
- Formation of Palladium Silicide Thin Layers on Si(110) Substrates
- Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition
- Behavior of Local Charge-Trapping Sites in La2O3–Al2O3 Composite Films under Constant Voltage Stress