Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition

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概要

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• We have investigated an initial stage of titanium nitride (TiN) growth on SiO2 substrates by ultrahigh-vacuum chemical vapor deposition with TiCl4 and NH3 as source materials. The behaviors of nucleation and grain growth of TiN have been clarified by atomic force microscopy and transmission electron microscopy. It was found that TiN film formation at an initial stage consists of three stages, which are characteristic of the lateral and subsequent vertical growth processes of grains. Deposition time dependence of the lateral growth of TiN grains clearly indicates that a process at 550°C is limited by the surface reaction, irrespective of the TiCl4 flow rate and a pretreatment for the substrates before the deposition. The pretreatment affects in the generation of additional nucleation sites on the SiO2 surface but does not affect the mechanisms of nucleation and grain growth.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-01-15

著者

• NAKATSUKA Osamu

  EcoTopia Science Institute, Nagoya University

• Naito Shinya

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Okuda Yasuyuki

  Department Of Drug Safety Research Eisai Co. Ltd.

• Kondo Hiroki

  Deparment Of Physics Saga University

• Zaima Shigeaki

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Sakai Akira

  Department Of Agricultural Chemistry The University Of Tokyo

• Nakatsuka Osamu

  EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Yasuda Yukio

  Research Institute of KUT, Kochi University of Technology, Tosayamada-cho, Kochi 782-8502, Japan

• Okuhara Tomoyuki

  Toyoko Kagaku Co., Ltd., 1280 Nakamaruko, Nakahara-ku, Kawasaki 211-8502, Japan

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