Behavior of Local Current Leakage in Stressed Gate SiO2 Films Analyzed by Conductive Atomic Force Microscopy

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概要

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• We studied local leakage currents induced in stressed gate SiO2 films and their time dependence by conductive atomic force microscopy (C-AFM). The current-voltage characteristics of the leakage currents detected in the C-AFM observations indicate Fowler-Nordheim tunneling currents enhanced by holes trapped in the stressed SiO2 films. By repeated C-AFM observations at the same area, it was found that individual spot currents decrease at different rates. This result indicates hole detrapping with different time constants from the stress-induced defects that have different features.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-07-15

著者

• SEKO Akiyoshi

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

• WATANABE Yukihiko

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

• Kondo Hiroki

  Deparment Of Physics Saga University

• Zaima Shigeaki

  Center For Cooperative Research In Advanced Science & Technology Nagoya University

• Sakai Akira

  Department Of Agricultural Chemistry The University Of Tokyo

• Yasuda Yukio

  Toyota Central R&D Labs., Inc, Nagakute, Aichi 480-1192, Japan

• Watanabe Yukihiko

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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