Behavior of Local Charge-Trapping Sites in La2O3–Al2O3 Composite Films under Constant Voltage Stress
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概要
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We have investigated the behavior of local charge-trapping sites in La2O3–Al2O3 composite films under electrical stress by observing local leakage current by conductive atomic force microscopy (C-AFM). The total area of leakage spots was observed to increase in current images obtained when repeating C-AFM observation at a constant substrate voltage. This phenomenon can be explained by the local trapping of holes in the film in which the Fowler–Nordheim tunneling current becomes predominant. On the other hand, in the area without leakage spots, average leakage current gradually decreases, due to the electron trapping in the film. The present C-AFM observation clearly reveals different behaviors of trapping sites for electrons and holes; the trapped holes are more easily detrapped than the electrons, and the number of electron-trapping sites is more effectively reduced by additional thermal oxidation than the number of holes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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SEKO Akiyoshi
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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Sakashita Mitsuo
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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OGAWA Masaki
Center for Cooperative Research in Advanced Science & Technology, Nagoya University
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Sago Toshifumi
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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