Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures
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概要
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The effects of light exposure during plasma processing on the electrical properties of GeO2/Ge structures were clarified by comparing their capacitance--voltage and conductance--voltage characteristics with those of Al2O3/Ge MOS structures. In addition, the effects of moisture in air and H2O exposures during the atomic layer deposition (ALD) process on the GeO2/Ge interface properties were investigated. It was found that light exposure causes far less degradation of the GeO2/Ge interface than of the Al2O3/Ge interface. However, for the GeO2/Ge interface, degradation resulted from air and H2O exposures during the ALD process. Exposure to air was also found to enhance the degradation caused by light exposure. These results strongly suggest that the GeO2/Ge interface is robust against light exposure, but it is important to suppress moisture and H2O exposure in order to maintain its high quality during plasma processing.
- 2013-01-25
著者
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Sakashita Mitsuo
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Kato Kimihiko
Department Of Cardiovascular Medicine Gifu Prefectural Government Tajimi Hospital
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Nakatsuka Osamu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Takeuchi Wakana
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Shibayama Shigehisa
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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