Low-Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
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概要
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The solid-phase epitaxial growth of NiSi2 in Ni/Ti/Si systems has been investigated. Continuous epitaxial NiSi2 layers consisting of pyramidal domains with {111} facets at the Ni-silicide/Si interface can be formed by annealing at a temperature (350°C) lower than that for conventional Ni/Si systems. This NiSi2 layer is transformed to a uniform epitaxial NiSi2 layer with an atomically flat silicide/Si interface by additional annealing at 850°C, while the {111} facets at the NiSi2/Si interface remains in the Ni/Si system under the same annealing conditions. Moreover, the epitaxial NiSi2 layer formed at 350°C exhibits a high thermal robustness even after annealing at higher than 750°C, in contrast to the polycrystalline NiSi layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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NAKATSUKA Osamu
EcoTopia Science Institute, Nagoya University
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TSUCHIYA Yoshinori
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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Okubo Kazuya
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Yasuda Yukio
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Nakatsuka Osamu
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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