Formation of Palladium Silicide Thin Layers on Si(110) Substrates
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概要
- 論文の詳細を見る
The formation of palladium silicide thin films from Pd/Si(110) and Pd/Si(001) systems with and without a Ti intermediate layer has been investigated. The existence of a Ti layer could improve the thermal stability of Pd2Si thin layers in Pd/Ti/Si(001). In addition, an epitaxial or highly oriented Pd2Si layer is formed in Pd/Ti/Si systems. However, the roughness of the Pd2Si/Si interface is observed in Pd/Ti/Si(110) systems, while the flatnesses of the Pd2Si/Si interface is observed in Pd/Ti/Si(001).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-05-25
著者
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Nakatsuka Osamu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Suryana Risa
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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