Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
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概要
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Effects of H-termination of Si(100) surfaces on electrical characteristics of Hf/p-Si interfaces have been examined. It is confirmed by high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS) that the H-terminated surface, prepared by wet treatments in HF and then in water, is very stable for native oxidation and adsorption of oxygen. Effective dielectric layer thicknesses of H-terminated Hf/p-Si interfaces are 1/4-1/3 smaller than those of nonterminated ones, and the ideality factors in current-voltage characteristics are very close to unity. Deep levels at E_v+0.14, E_v+0.43 and E_v+0.52 eV are observed for 460℃-annealed diodes by deep-level transient spectroscopy (DLTS), the densities of which are reduced below the detection limit by annealing at 580℃. It can be concluded that the H-termination is markedly effective in improving electrical characteristics of Hf/p-Si interfaces.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Yasuda Y
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Ikeda Hiroya
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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IWANO Hirotaka
Department of Crystalline Materials Science, School of Engineering, Nagoya University
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Kojima Jun
Department Of Pathophysiological Laboratory Science Nagoya Univesity Graduate School Of Medicine
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Yasuda Yukio
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Hayashi Masakazu
Department Of Crystalline Materials Science School Of Engineering Nagoya University
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Kojima Jun
Department Of Crystalline Materials Science School Of Engineering Nagoya University
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IWANO Hirotaka
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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