Osamu Nakatsuka | Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
スポンサーリンク
概要
- Nakatsuka Osamuの詳細を見る
- 同名の論文著者
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japanの論文著者
関連著者
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Nakatsuka Osamu
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Osamu Nakatsuka
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Suryana Risa
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Shigeaki Zaima
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Tsutsui Norimasa
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Shimura Yosuke
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Shotaro Takeuchi
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Akira Sakai
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Risa Suryana
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Yosuke Shimura
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
著作論文
- Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
- Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer