Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface

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概要

• 論文の詳細を見る

• Directly bonded interfaces of hydrophilic and hydrophobic Si(100) wafers were studied from the viewpoint of bonding energy and chemical products as a function of the annealing temperature. The experimental results indicated that for both hydrophilic and hydrophobic Si/Si bonded wafer pairs, the behavior of the bubbles at the bonding interface and the bonding energy were closely related to the behavior of the hydrogen and oxygen atoms at the bonding interface. The bonding mechanisms for both cases have been discussed on the basis of the chemical reactions induced by the annealing temperature.

• 2009-01-25

著者

• SAKAI Akira

  Graduate School of Engineering, Nagoya University

• Ogawa Masaki

  Ecotopia Science Institute Nagoya University

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Izunome Koji

  Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan

• Isogai Hiromichi

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Toyoda Eiji

  Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan

• Senda Takeshi

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Nakatsuka Osamu

  Graduate School of Eng., Nagoya Univ.

• Toyoda Eiji

  Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

• Sakai Akira

  Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan

• Senda Takeshi

  Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan

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