Crystallinity Investigation of Compositionally Graded SiGe Layers by Synchrotron X-ray Cross-Sectional Diffraction
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概要
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We have investigated the crystallinity of compositionally graded SiGe layers of strained Si (s-Si) wafers in the growth direction by irradiating a synchrotron X-ray microbeam with a high parallelism on a cross section of s-Si wafers. As a result, we can confirm the presence of surface parallel SiGe lattice rotation and lattice rotation distribution (LRD). The surface parallel LRD and relaxation ratio of SiGe start to decrease in the depth direction below approximately 3 μm from the wafer surface. It is inferred that the insufficient relaxation of SiGe near the wafer surface is caused by the characteristics of the free wafer surface. Furthermore, such characteristics are thought to lead to a reduction in LRD near the wafer surface.
- 2008-08-25
著者
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KAGOSHIMA Yasushi
Graduate School of Material Science, University of Hyogo
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Takano Hidekazu
Graduate School Of Material Science University Of Hyogo
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Fukuda Kazunori
Graduate School Of Science And Technology Niigata University
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Matsui Junji
Graduate School of Science, Himeji Inst. of Tech.
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Tsusaka Yoshiyuki
Graduate School Of Material Science University Of Hyogo
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Izunome Koji
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
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Izunome Koji
Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Senda Takeshi
Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Hayashi Kazuki
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Abe Maiko
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Takahata Sayuri
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Hayashi Kazuki
Graduate School of Material Science, University of Hyogo, 3-1-1 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan
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Tsusaka Yoshiyuki
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Tsusaka Yoshiyuki
Graduate School and Faculty of Science, Himeji Institute of Technology, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297, Japan
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Matsui Junji
Graduate School and Faculty of Science, Himeji Institute of Technology, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297, Japan
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Matsui Junji
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Fukuda Kazunori
Graduate School of Material Science, University of Hyogo, 3-1-1 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan
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Fukuda Kazunori
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Kagoshima Yasushi
Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297, Japan
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Kagoshima Yasushi
Graduate School and Faculty of Science, Himeji Institute of Technology, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297, Japan
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Senda Takeshi
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
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