Measurement of Strain Distribution in InGaAsP Selective-Area Growth Layers Using a Micro-Area X-Ray Diffraction Method With Sub-μm Spatial Resolution : Instrumentation, Measurement, and Fabrication Technology
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-09-15
著者
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KOBAYASHI Kenji
Fundamental Research Laboratories, NEC Corporation
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KIMURA Shigeru
Fundamental Research Laboratories, NEC Corporation
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Izumi Koichi
Fundamental Reserch Laboratories Nec Corporation
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Izumi Koichi
Fundamental Research Laboratories Nec Corporation
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Sudo Sinya
Optical Semiconductor Department Nec Compound Semiconductor Devices Ltd.
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Sakata Yasutaka
Compound Semiconductor Device Department Nec Kansai Ltd.
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Kimura S
Fundamental Research Laboratories Nec Corporation
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KAGOSHIMAI Yasushi
Graduate School of Science, Himeji Institute of Technology
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YOKOYAMA Yoshiyuki
Graduate School of Science, Himeji Institute of Technology
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NIIMI Toshihiro
Graduate School of Science, Himeji Institute of Technology
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TSUSAKAI Yoshiyuki
Graduate School of Science, Himeji Institute of Technology
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MATSUII Junji
Graduate School of Science, Himeji Institute of Technology
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Matsuii Junji
Graduate School Of Science Himeji Institute Of Technology
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Kimura Shigeru
Fundamental Research Laboratories Nec Corporation
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Kagoshimai Yasushi
Graduate School Of Science Himeji Institute Of Technology
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Tsusakai Yoshiyuki
Graduate School Of Science Himeji Institute Of Technology
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Niimi Toshihiro
Graduate School Of Science Himeji Institute Of Technology
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Yokoyama Yoshiyuki
Graduate School Of Science Himeji Institute Of Technology
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Kobayashi Kenji
Fundamental Research Laboratories Nec Corporation
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Kagoshima Yasushi
Graduate School and Faculty of Science, Himeji Institute of Technology, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297, Japan
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