Preparation of Freestanding GaN Wafers by Hydride Vaper Phase Epitaxy with Void-Assisted Separation
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概要
- 論文の詳細を見る
- 2003-01-15
著者
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Oshima Yuichi
Advanced Research Center Hitachi Cable Ltd.
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Sunakawa Haruo
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kobayashi Kenji
Fundamental Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Eri Takeshi
Advanced Research Center, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
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Shibata Masatomo
Advanced Research Center, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
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Usui Akira
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Oshima Yuichi
Advanced Research Center, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
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