Observation of Triple-Period-A Type Atomic Ordering in Sb-Doped Ga_<0.5>In_<0.5>P Alloys
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概要
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Triple-period-A(TP-A)type ordering of atoms has been observed in Sb-doped Ga_<0.5>In_<0.5>P grown by metal-organic vaporphase epitaxy on(001)GaAs at 〜 650°C. The appearance of TP-A type ordering at such a high temperature with a very low flow-rate for Sb is believed to result from the formation of(2 × 3)surface reconstruction with double Sb-rich-group-V-surface layers during growth, due to the antimony's low vapor pressure. Sb constituted as little as 1.6% of the atoms in the group-V sublattice. A peculiar characteristic in the pattern of the diffuse scattering from Sb-doped Ga_<0.5>In_<0.5>P was interpreted to result from the novel orientation of the shallow disk-shaped domains of TP-A type ordering.
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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SUZUKI Tohru
Opto-Electronics Research Laboratories, NEC Corporation
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NISHI Kenichi
Opto-electronics Research Laboratories, NEC Corporation
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Kurihara Kaori
Opto-Electronics Research Laboratories, NEC Corporation
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Kurihara Kaori
Opto-electronics And High-frequency Device Research Laboratories Nec Corporation
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ICHIHASHI Toshinari
Fundamental Research Laboratories, NEC Corporation
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Nishi Kenichi
Opto-electronics And High-frequency Device Research Laboratories Nec Corporation
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Suzuki Tohru
Opto-electronics And High-frequency Device Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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