Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
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概要
- 論文の詳細を見る
We observed the atomic arrangement of a triple-period (TP-) A-type ordered GaInP layer with Sb added during metalorganic vapor-phase epitaxy, by using an ultra-high-vacuum cross-sectional scanning tunneling microscope (STM). STM imaging of the ordered GaInP region revealed the arrangement of the TP-A-type ordered GaInP layer, and that the layer was composed of two InP-like planes and one GaP-like plane.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-02-15
著者
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Gomyo Akiko
Fundamental And Environmental Research Laboratories Nec Corporation
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OHKOUCHI Shunsuke
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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FURUHASHI Takahisa
Department of Materials Science & Engineering, Tokyo Institute of Technology
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Hsu Chung-chi
Department Of Electronic Engineering The Chinese University Of Hong Kong
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Suzuki Tohru
Photonics And Wireless Devices Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental Research Laboratories Nec Corporation
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Ohkouchi Shunsuke
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Furuhashi Takahisa
Department of Materials Science & Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Hsu Chung-Chi
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
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Suzuki Tohru
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ichihashi Toshinari
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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