Violation of a Variant Selection Rule in Atomic Ordering Observed in Ga_<0.5>In_<0.5>P with Sb Added during Growth : Semiconductors

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概要

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• A new relation between the direction of the substrate surface normal and that of triple-period-A (TP-A) ordering was observed in Ga_<0.5>In_<0.5>P grown on a vicinal (001) GaAs substrate misoriented towards the [- 1 - 11]A direction. The crystal was grown with a very small amount of Sb added during metalorganic vapor phase epitaxy. To our knowledge, this relation of surface-step vs variant is, irrespective of the types of ordering and the kinds of alloys, the first case in which the ordering variant selection rule thus far observed is being violated. This indicates a new phase relation at each step between unit cells of a × 3 surface reconstruction on the upper terrace and those on the adjacent lower terrace, with respect to the (111) direction nearest to the surface normal. The cause of this new step-variant relation is suggested.

• 社団法人応用物理学会の論文
• 2001-01-15

著者

• Hsu Chung-chi

  Department Of Electronic Engineering The Chinese University Of Hong Kong

• Suzuki Tohru

  System Devices And Fundamental Research Nec Corporation

• ICHIHASHI Toshinari

  System Devices and Fundamental Research, NEC Corporation

• HSUI Chung-Chi

  Department ofElectronic Engineering, The Chinese University of Hong Kong

• Ichihashi Toshinari

  System Devices And Fundamental Research Nec Corporation

• Hsui Chung-chi

  Department Ofelectronic Engineering The Chinese University Of Hong Kong

関連論文

• Energy-filtered electron diffraction and high-resolution electron microscopy on short-range ordered structure in GaAs_Sb_
• Violation of a Variant Selection Rule in Atomic Ordering Observed in Ga_In_P with Sb Added during Growth : Semiconductors
• Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope

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