FURUHASHI Takahisa | Department of Materials Science & Engineering, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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Gomyo Akiko
Fundamental And Environmental Research Laboratories Nec Corporation
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OHKOUCHI Shunsuke
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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FURUHASHI Takahisa
Department of Materials Science & Engineering, Tokyo Institute of Technology
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GOMYO Akiko
Fundamental and Environmental Research Laboratories, NEC Corporation
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ICHIHASHI Toshinari
Fundamental Research Laboratories, NEC Corporation
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SUZUKI Tohru
Photonics and Wireless Devices Research Laboratories, NEC Corporation
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HSU Chung-Chi
Department of Electronic Engineering, The Chinese University of Hong Kong
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Hsu Chung-chi
Department Of Electronic Engineering The Chinese University Of Hong Kong
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Suzuki Tohru
Photonics And Wireless Devices Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental Research Laboratories Nec Corporation
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Ohkouchi Shunsuke
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Furuhashi Takahisa
Department of Materials Science & Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Hsu Chung-Chi
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
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Suzuki Tohru
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ichihashi Toshinari
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
著作論文
- Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
- Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope