Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope

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概要

• 論文の詳細を見る
• 2005-02-15

著者

• GOMYO Akiko

  Fundamental and Environmental Research Laboratories, NEC Corporation

• Gomyo Akiko

  Fundamental And Environmental Research Laboratories Nec Corporation

• ICHIHASHI Toshinari

  Fundamental Research Laboratories, NEC Corporation

• SUZUKI Tohru

  Photonics and Wireless Devices Research Laboratories, NEC Corporation

• HSU Chung-Chi

  Department of Electronic Engineering, The Chinese University of Hong Kong

• OHKOUCHI Shunsuke

  Photonic and Wireless Devices Research Laboratories, NEC Corporation

• FURUHASHI Takahisa

  Department of Materials Science & Engineering, Tokyo Institute of Technology

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• Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
• Energy-filtered electron diffraction and high-resolution electron microscopy on short-range ordered structure in GaAs_Sb_
• Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
• Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
• Observation of Triple-Period-A Type Atomic Ordering in Sb-Doped Ga_In_P Alloys
• Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
• "Incipient Orthorhombic" Phase in Ba_2YCu_3O_ Ctystals : Electrical Properties of Condensed Matter
• Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
• Coupled Waveguide Devices Based on Autocloned Photonic Crystals

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