Izunome Koji | Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan

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著作論文

Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates
Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal--Oxide--Semiconductor Field-Effect Transistor
Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
Critical Thickness of Strained Si on SiGe Bulk Virtual Substrate by Low-Pressure Chemical Vapor Deposition
Crystallinity Investigation of Compositionally Graded SiGe Layers by Synchrotron X-ray Cross-Sectional Diffraction
Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si (Special Issue : Solid State Devices and Materials)

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