Matsumoto Hiroaki | Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan

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概要

関連著者

MATSUMOTO Hiroaki
Hitachi High-Tech Manufacturing and Service Corporation
Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
Izunome Koji
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Jeon Sung-Ho
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
Taoka Noriyuki
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
Araki Koji
Covalent Silicon Corporation, Seiro, Niigata 957-0197, Japan
Nakano Kiyotaka
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
Koyama Susumu
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
Kakibayasi Hiroshi
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
Miyashita Moriya
Covalent Silicon Corporation, Seiro, Niigata 957-0197, Japan
Matsumoto Hiroaki
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan

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著作論文

Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si

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