Jeon Sung-Ho | Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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概要
- Jeon Sung-Hoの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japanの論文著者
関連著者
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MATSUMOTO Hiroaki
Hitachi High-Tech Manufacturing and Service Corporation
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Izunome Koji
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Jeon Sung-Ho
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Araki Koji
Covalent Silicon Corporation, Seiro, Niigata 957-0197, Japan
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Nakano Kiyotaka
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
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Koyama Susumu
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
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Kakibayasi Hiroshi
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
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Miyashita Moriya
Covalent Silicon Corporation, Seiro, Niigata 957-0197, Japan
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Taoka Noriyuki
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Matsumoto Hiroaki
Hitachi High-Technologies Corporation, Hitachinaka, Ibaraki 312-0057, Japan
著作論文
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si (Special Issue : Solid State Devices and Materials)