Toyoda Eiji | Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
スポンサーリンク
概要
関連著者
-
Izunome Koji
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
-
Isogai Hiromichi
Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
-
Toyoda Eiji
Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
-
Sakai Akira
Graduate School of Engineering Science, Osaka University, 1-3 Machikane-cho, Toyonaka, Osaka 560-8531, Japan
-
SAKAI Akira
Graduate School of Engineering, Nagoya University
-
Toyoda Eiji
Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan
-
Sakai Akira
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
-
Nakamura Yoshiaki
Graduate School Of Engineering Hokkaido University
-
Kikkawa Jun
Graduate School Of Engineering Science Osaka University
-
Zaima Shigeaki
Graduate School Of Eng. Nagoya Univ.
-
Senda Takeshi
Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
-
Nakatsuka Osamu
Graduate School of Eng., Nagoya Univ.
-
Senda Takeshi
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
-
Ogawa Masaki
Ecotopia Science Institute Nagoya University
-
Nakatsuka Osamu
Graduate School Of Engineering Nagoya University
-
Izunome Koji
Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan
-
Isogai Hiromichi
Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan
-
Yoshitake Osamu
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
-
Omote Kazuhiko
Rigaku Corp., Akishima, Tokyo 196-8666, Japan
-
Nakatsuka Osamu
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Kikkawa Jun
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
-
Zaima Shigeaki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Iwasaki Yuji
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
-
Sato Motoki
Covalent Silicon Co., Ltd., Seiro, Niigata 957-0197, Japan
著作論文
- Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates
- Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal--Oxide--Semiconductor Field-Effect Transistor
- Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
- Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates