Critical Thickness of Strained Si on SiGe Bulk Virtual Substrate by Low-Pressure Chemical Vapor Deposition
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概要
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The critical thickness of strained Si (s-Si) grown on Si0.8Ge0.2 by low-pressure chemical vapor deposition (LP-CVD) and the quantitative relationship between s-Si layer thickness and dislocation densities were investigated by etch pit density (EPD) analysis. The obtained results showed that an increase in s-Si layer thickness increases the threading dislocation density (TDD) and misfit dislocation density (MDD) in the s-Si layer grown on the SiGe layer. In this experiment, the critical thickness of the s-Si layer grown on the SiGe layer was between 2 and 5 nm. This value is significantly lower than the critical thickness of Si0.8Ge0.2 on Si obtained on the basis of Matthews’ theory (between approximately 10 and 15 nm).
- 2007-10-15
著者
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Izunome Koji
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
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Senda Takeshi
Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Igarashi Masato
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
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Mitani Shinichi
NuFlare Technology Inc., 2068-3 Ooka, Numazu, Shizuoka 410-8510, Japan
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Senda Takeshi
Covalent Materials Corporation, 6-861-5 Higashi-ko, Seiro, Kitakanbara, Niigata 957-0197, Japan
関連論文
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- Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
- Critical Thickness of Strained Si on SiGe Bulk Virtual Substrate by Low-Pressure Chemical Vapor Deposition
- Crystallinity Investigation of Compositionally Graded SiGe Layers by Synchrotron X-ray Cross-Sectional Diffraction
- Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
- Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
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