Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique (Special issue: Dielectric thin films for future electron devices: science and technology)

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Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
Pr-Oxide-Based Dielectric Films on Ge Substrates
Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N2--H2 Mixture Plasmas
Impacts of CF+, CF2+, CF3+, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist
Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique (Special issue: Dielectric thin films for future electron devices: science and technology)
Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure
Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
Characterization of Damage of AlO/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth
Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors
Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn
Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System
Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films
Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
Increase of Si
Interfacial Reaction Mechanisms in Al
Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes
Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers
High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System
High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface

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