Interfacial Reaction Mechanisms in Al
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概要
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We have investigated the impacts of the oxygen radical process on the interfacial structures and electrical properties of Al<inf>2</inf>O<inf>3</inf>/Ge structures to clarify the interfacial reaction mechanisms. At a low process temperature, the oxygen radical process can introduce oxygen atoms to the Al<inf>2</inf>O<inf>3</inf>/Ge interface without a thermally activated process in spite of the high barrier property of the oxygen diffusion for the Al<inf>2</inf>O<inf>3</inf>layers. In addition, the oxygen radical process at a low process temperature can relatively suppress the diffusion of Ge atoms from the Ge substrate or GeO molecules from the Al<inf>2</inf>O<inf>3</inf>/Ge interface to the surface of the Al<inf>2</inf>O<inf>3</inf>layer. However, at a high process temperature, Ge atoms and/or GeO molecules actively diffuse into the Al<inf>2</inf>O<inf>3</inf>layer during the oxygen radical process as well as the O<inf>2</inf>thermal annealing, and the diffusion changes the depth distribution of Ge oxides in the Al<inf>2</inf>O<inf>3</inf>/Ge structure. From the analysis of the electrical properties of MOS capacitors, the interface state density (D_{\text{it}}) of the Al<inf>2</inf>O<inf>3</inf>/Ge structure decreases not with increasing thickness of the Ge oxide interlayer but with the amount of Ge oxide near the Al<inf>2</inf>O<inf>3</inf>/Ge interface. The increase in the amount of the Ge oxide distributed in the Al<inf>2</inf>O<inf>3</inf>layer induces the increase in the capacitance equivalent thickness (CET). The diffusion of Ge into the Al<inf>2</inf>O<inf>3</inf>layer with a high process temperature causes the unexpected increase in CET. Therefore, the oxygen radical process at low temperature effectively decreases D_{\text{it}} of Al/Al<inf>2</inf>O<inf>3</inf>/Ge MOS capacitors without increasing CET.
- 2013-04-25
著者
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Kato Kimihiko
Graduate School Of Eng. Nagoya Univ.:research Fellow Of Japan Society For The Promotion Science
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Takeuchi Wakana
Graduate School Of Eng. Nagoya Univ.
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Shibayama Shigehisa
Graduate School Of Eng. Nagoya Univ.
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Zaima Shigeaki
Graduate School Of Eng. Nagoya Univ.
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Sakashita Mitsuo
Graduate School of Eng., Nagoya Univ.
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Nakatsuka Osamu
Graduate School of Eng., Nagoya Univ.
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Taoka Noriyuki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Shibayama Shigehisa
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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