Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure

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概要

• 論文の詳細を見る

• We have investigated the effect of light induced damages on the electrical properties of the Al_2O_3/Ge gate stack structure during nitrogen plasma process. Capacitance-voltage characteristics revealed that the light exposure with a photon energy over 7.5 eV causes the negative flatband voltage shift due to increasing in the net density of positive fixed oxide charge. The density of trapped charge and the interface state density significantly increase after the light exposure with a photon energy over 11.3 eV. We also found that these damages can be recovered by the post metallization annealing at 300℃.

• 2011-06-27

著者

• SAKASHITA Mitsuo

  Graduate School of Engineering, Nagoya University

• NAKATSUKA Osamu

  Graduate School of Engineering, Nagoya University

• Zaima S

  Nagoya Univ. Nagoya Jpn

• Nakatsuka O

  Graduate School Of Engineering Nagoya University

• Zaima Shigeaki

  Graduate School Of Engineering Nagoya University

• Sakashita M

  Graduate School Of Engineering Nagoya University

• Kato Kimihiko

  Graduate School Of Eng. Nagoya Univ.:research Fellow Of Japan Society For The Promotion Science

• Takeuchi Wakana

  Graduate School of Eng., Nagoya Univ.

• Shibayama Shigehisa

  Graduate School of Eng., Nagoya Univ.

• Takeuchi Wakana

  Graduate School Of Eng. Nagoya Univ.

• Shibayama Shigehisa

  Graduate School Of Eng. Nagoya Univ.

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Nakatsuka Osamu

  Graduate School Of Engineering Nagoya University

• Sakashita Mitsuo

  Graduate School of Eng., Nagoya Univ.

• Nakatsuka Osamu

  Graduate School of Eng., Nagoya Univ.

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