A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface

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概要

• 論文の詳細を見る

著者

• KONDO Hiroki

  Graduate School of Engineering, Nagoya University

• Hori Masaru

  Graduate School Of Engineering Nagoya University

• Takeda Keigo

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Ishikawa Kenji

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Sekine Makoto

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Kometani Ryosuke

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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• Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
• Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
• Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films
• A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
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• A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
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