Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
スポンサーリンク
概要
- 論文の詳細を見る
In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C5HF7) gas with addition of O2 and dilution in Ar gas, highly selective etching of SiO2 at selectivities of 40 against Si3N4 and 57 against polycrystalline Si was realized. Gas phase fluorocarbon species containing H atoms such as CxHFy (x>2) played key roles in the selective deposition of thick hydrofluorocarbon films that covered the Si3N4 and polycrystalline silicon (poly-Si) surfaces and in the selective etching of SiO2 over the photoresist, SiN, and Si.
- 2013-01-25
著者
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KONDO Hiroki
Graduate School of Engineering, Nagoya University
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Hori Masaru
Graduate School Of Engineering Nagoya University
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Takeda Keigo
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Kondo Hiroki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ito Azumi
Research & Development Center, ZEON Corporation, Kawasaki 210-9507, Japan
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Hayashi Toshio
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Miyawaki Yudai
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Kondo Yusuke
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Yamazaki Atsuyo
Research & Development Center, ZEON Corporation, Kawasaki 210-9507, Japan
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Matsumoto Hirokazu
Research & Development Center, ZEON Corporation, Kawasaki 210-9507, Japan
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