High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System

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概要

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• We have developed an atmospheric pressure microwave plasma system with a microwave antenna consisting of two microwave guides, which have a discharge line with 41 slots. The antenna is set against a movable stage with a heater in a process chamber. The process gas used is a 1% H<inf>2</inf>gas diluted by Ar gas. We clarified various characteristics, such as gas temperature, electron density, and hydrogen radical density, using this system, and found that the gas temperature is about 1000 K, the electron density is 1\times 10^{15} cm^-3, and the H radical density is 1\times 10^{16} cm^-3at the slot under the condition of a 10 GHz, 1.5 kW, pulsed microwave with a pulsed voltage of 2.5, a pulsed frequency of 4 kHz, and a duty ratio of 0.16.

• 2013-11-25

著者

• KONDO Hiroki

  Graduate School of Engineering, Nagoya University

• Hori Masaru

  Graduate School Of Engineering Nagoya University

• Itoh Hitoshi

  Technology Development Center Tokyo Electron Ltd.

• Takeda Keigo

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Ishikawa Kenji

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Toyoda Hirotaka

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Kubota Yusuke

  Technology Development Center, Tokyo Electron Ltd., Tsukuba, Ibaraki 305-0841, Japan

• Kashiwagi Yusaku

  Technology Development Center, Tokyo Electron Ltd., Tsukuba, Ibaraki 305-0841, Japan

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