A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
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概要
- 論文の詳細を見る
We report the damageless surface morphology of gallium nitride (GaN) films during argon and nitrogen plasma etching at elevated temperatures up to 600 °C. For Ar plasma bombardment at high substrate temperatures of around 600 °C, Ar<sup>+</sup>ion bombardment dissociates Ga--N bonds by the preferential removal of nitrogen, which promotes roughness of the GaN surface by the aggregation of gallium atoms. For the N<inf>2</inf>plasma one, the N/Ga remains stoichiometric with higher values above 0.69, and the surface is not significantly roughened, even at 600 °C. Therefore, the aggregation of metallic Ga induces surface roughening during ion-enhanced etching of GaN at elevated substrate temperatures.
- 2013-05-25
著者
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KONDO Hiroki
Graduate School of Engineering, Nagoya University
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Hori Masaru
Graduate School Of Engineering Nagoya University
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Takeda Keigo
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Hori Masaru
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Kometani Ryosuke
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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