Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
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概要
- 論文の詳細を見る
Subsurface reactions of organic low dielectric (low $k$) film exposed to plasmas with low ion bombardment energy were investigated by a real time analysis of Fourier transform infrared attenuated total reflection (FT-IR ATR). The exposure of N2 plasma resulted in the formation of a CN layer composed of C(sp2)=N and C(sp3)–N bonds. After the N2 plasma exposure, the surface was exposed to H2 plasma. C(sp1)$\equiv$N and C(sp2)=N bonds were removed by the H radicals, while the C(sp3)–N bond remained. It was found that the C(sp3)–N bond was the key chemical bond against H2 plasma exposure. Based on the analyses, a reaction model for anisotropic profile in organic low $k$ film etching employing N–H plasmas is proposed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-01
著者
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Hiramatsu Mineo
Department Of Electrical And Electronic Engineering Meijo University
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Nagai Hisao
Department Of Chemistry College Of Humanities And Sciences Nihon University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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Nagai Hisao
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Hiramatsu Mineo
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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