Low-$k$ SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma
スポンサーリンク
概要
- 論文の詳細を見る
We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-$k$ SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.
- 2006-09-15
著者
-
Nagai Mikio
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
-
Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
-
OKAMOTO Hidekazu
Asahi Glass Co., Ltd.
-
Nagai Mikio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Okamoto Hidekazu
Asahi Glass Co., Ltd., Yokohama 221-8755, Japan
-
Hayashi Takayuki
Department of Chemistry Faculty of Literature and Science Yamaguchi University
関連論文
- On-Orbit Performance of the X-Ray Telescopes and Thermal Wobbling of the Suzaku Satellite(Chapter 12. Instructions of Suzaku Data Analysis, The Extreme Universe in the Suzaku Era)
- Diamond Film Formation by OH Radical Injection from Remote Microwave H_2/H_2O Plasma into Parallel-Plate RF Methanol Plasma
- High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
- Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
- Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
- Development of Compact C_2F_4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
- Suzaku discovery of hard X-ray pulsations from a rotating magnetized white dwarf, AE Aquarii
- Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C_5F_O/N_2 Plasma
- Diffusion-weighted Imaging of Breast Cancer with the Sensitivity Encoding Technique : Analysis of the Apparent Diffusion Coefficient Value
- Octave Spanning High Quality Super Continuum Generation Using 10nJ and 104fs High Energy Ultrashort Soliton Pulse
- Combinatorial Plasma Etching Process
- Synthesis of Platinum Nanoparticles on Two-Dimensional Carbon Nanostructures with an Ultrahigh Aspect Ratio Employing Supercritical Fluid Chemical Vapor Deposition Process
- Control of Electric Conduction of Carbon Nanowalls
- Electrical Characterization of Carbon Nanowalls
- High Performance of Silicon Oxide Selective Etching Using F_2 Gas and Graphite Instead of Perfluorinated Compound Gases
- Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
- Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
- Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
- Measurement of Carbon Atom Density in High Density Plasma Process
- Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma
- Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N_2 and H_2 Gas Chemistry
- Synthesis of Polytetrafluoroethylene-like Films by a Novel Plasma Enhanced Chemical Vapor Deposition Employing Solid Material Evaporation Technique
- CH_3 Radical Density in Electron Cyclotron Resonance CH_3OH and CH_3OH/H_2 Plasmas
- Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique
- CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
- Characteristics of Fluorocarbon Radicals and CHF_3 Molecule in CHF_3 Electron Cyclotron Resonance Downstream Plasma
- CF_X(X=1-3) Radicals Controlled by On-Off Modulated Electron Cyclotron Resonance Plasma and Their Effects on Polymer Film Deposition ( Plasma Processing)
- Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source
- Spatial distributions of electron, CF, and CF2 radical densities and gas temperature in DC-superposed dual-frequency capacitively coupled plasma etch reactor employing cyclic-C4F8/N2/Ar gas
- Atmospheric Pressure Fluorocarbon-Particle Plasma Chemical Vapor Deposition for Hydrophobic Film Coating
- Measurement of Spatial Distribution of SiF_4 and SiF_2 Densities in High Density SiF_4 Plasma Using Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Spatial Distribution Measurement of Absolute Densities of CF and CF_2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Critical Factors for Nucleation and Vertical Growth of Two Dimensional Nano-Graphene Sheets Employing a Novel Ar^+ Beam with Hydrogen and Fluorocarbon Radical Injection
- Effects of Dilution Gases on Si Atoms and SiHx^^+ (X = 0-3) Ions in Electron Cyclotron Resonance SiH_4 Plasmas
- Measurements of the CF, CF_2 and CF_3 Radicals in a CHF_3 Electron Cyclotron Resonance Plasma
- Proliferative Effects of Bovine and Porcine Thyroglobulins on Thyroid Epithelial Cells
- Deposition of Diamond-Like Carbon Using Compact Electron-Beam-Excited Plasma Source
- Investigation of Nitrogen Atoms in Low-Pressure Nitrogen Plasmas Using a Compact Electron-Beam-Excited Plasma Source
- Measurement of Hydrogen Radical Density and Its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases
- Surface Loss Probability of Nitrogen Atom on Stainless-Steel in N2 Plasma Afterglow
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF4 Plasmas
- Control of Fluorocarbon Radicals by On-Off Modulated Electron Cyclotron Resonance Plasma
- Evaluation of Property Changes due to Radiation, Radicals, and Ions on Organic Low-$k$ Films in H2/N2 Plasma Etching
- Development of Compact C2F4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
- Synthesis of Fluorinated SiN_x Gate Dielectric Films Using ECR-PECVD Employing SiF_4/N_2/H_2 Gases
- Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH_3 and SiF_4
- Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition
- Contrast Enhancement of Wavelength-Selective Detection of Mid-Infrared Using Localized Atmospheric-Pressure Plasma Treatment
- Novel atmospheric pressure inductively coupled micro plasma source using floating wire electrode (Special issue: Plasma processing)
- Dependence of Surface-Loss Probability of Hydrogen Atom on Pressures in Very High Frequency Parallel-Plate Capacitively Coupled Plasma
- Effect of Low Level O2 Addition to N2 on Surface Cleaning by Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma
- Floating Wire for Enhancing Ignition of Atmospheric Pressure Inductively Coupled Microplasma (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Temperature and Density of CF Radicals in 60 MHz Capacitively Coupled Fluorocarbon Gas Plasma
- Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching by Injection of Radicals
- Aligned Growth of Single-Walled and Double-Walled Carbon Nanotube Films by Control of Catalyst Preparation
- High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Dense Carbon Nanotube Films Using Microwave Plasma-Enhanced Chemical Vapor Deposition
- Control of Super Hydrophobic and Super Hydrophilic Surfaces of Carbon Nanowalls Using Atmospheric Pressure Plasma Treatments (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Silicon Oxide Selective Etching Employing Dual Frequency Superimposed Magnetron Sputtering of Carbon Using F2/Ar Gases
- Inactivation of Penicillium digitatum Spores by a High-Density Ground-State Atomic Oxygen-Radical Source Employing an Atmospheric-Pressure Plasma
- Nitriding of Polymer by Low Energy Nitrogen Neutral Beam Source
- Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma
- Fabrication of Multilayered SiOCH Films with Low Dielectric Constant Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation
- Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature
- Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation
- Nucleation Control of Carbon Nanowalls Using Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Graphene-Based Films Using Microwave-Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Carbon Nanowalls on Carbon Fiber Paper for Fuel Cell Application
- High-Performance Decomposition and Fixation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism
- Multiple-Height Microstructure Fabricated by Deep Reactive Ion Etching and Selective Ashing of Resist Layer Combined with Ultraviolet Curing
- H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition
- An Autonomously Controllable Plasma Etching System Based on Radical Monitoring
- Surface Modification Process of Contact Lens Using Three-Phase AC Excited Nonequilibrium Atmospheric Pressure Ar Plasma
- Novel Silicon Wafer Slicing Technology Using Atmospheric-Pressure Reactive Microplasma
- Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
- Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
- Inactivation Process of Penicillium digitatum Spores Treated with Non-equilibrium Atmospheric Pressure Plasma
- Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO
- Roles of SiH3 and SiH2 Radicals in Particle Growth in rf Silane Plasmas
- Optical-Fiber-Type Broadband Cavity Ring-Down Spectroscopy Using Wavelength-Tunable Ultrashort Pulsed Light
- Development and Characterization of a New Compact Microwave Radical Beam Source
- Fabrication of Carbon Nanowalls Using Novel Plasma Processing
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH4 Plasma with Ar, N2, and H2 Dilution Gases
- Synthesis of Polytetrafluoroethylene-like Films by a Novel Plasma Enhanced Chemical Vapor Deposition Employing Solid Material Evaporation Technique
- Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
- Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma
- Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process
- Low-$k$ SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes (Special Issue : Dry Process)
- Reactions of enamino ketones. VII. The photochemical reaction of 4-methylamino-3-penten-2-one and 2,4-pentanedione with benzophenone.
- A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma
- Optical-Fiber-Type Broadband Cavity Ring-Down Spectroscopy Using Wavelength-Tunable Ultrashort Pulsed Light
- Studies on the Diacylaminoanthraquinone Dyes
- Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO_2 on Carbon Nanowalls